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纳米加工门定义的GaAs / AlGaAs多量子点横向
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JoVE Journal
Engineering
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Please note that all translations are automatically generated.
Click here for the English version.
纳米加工门定义的GaAs / AlGaAs多量子点横向
DOI:
10.3791/50581-v
•
15:47 min
•
November 01, 2013
•
Chloé Bureau-Oxton
,
Julien Camirand Lemyre
,
Michel Pioro-Ladrière
1
Département de Physique, Faculté des Sciences
,
Université de Sherbrooke
Chapters
00:05
Title
01:21
Etching of the Mesa
05:53
Fabrication of the Ohmic Contacts
08:38
Fabrication of the Titanium/Gold Schottky Leads
10:45
Fabrication of the Aluminum Gates
11:08
Fabrication of the Bonding Pads
11:54
Dicing of the Sample
12:50
Bonding
13:07
Results: Confirming Gate Integrity
15:14
Conclusion
Summary
Automatic Translation
English (Original)
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Automatic Translation
本文提出了一个详细的制作门定义的半导体横向量子点砷化镓异质协议。这些纳米器件被用来捕获一些电子作为量子比特的量子信息处理或其他细观实验,如相干电导测量使用。
Tags
Quantum Computer
Qubit
Quantum Dot
GaAs/AlGaAs
Nanofabrication
Lateral Quantum Dot
Superposition
Entanglement
Spin State
E-beam Lithography
Cleanroom
Scanning Electron Microscope
E-beam Evaporation
Wafer Fabrication
Characterization
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