Исчерпывающая характеристика протяженных дефектов в полупроводниковых материалах на растровом электронном микроскопе

The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.