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Исчерпывающая характеристика протяженных дефектов в полупроводниковых материалах на растровом электронном микроскопе
JoVE Journal
Engineering
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JoVE Journal Engineering
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Исчерпывающая характеристика протяженных дефектов в полупроводниковых материалах на растровом электронном микроскопе

русский

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11:14 min

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May 28, 2016

DOI:

10.3791/53872-v

DOI:
10.3791/53872-v

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11:14 min
May 28, 2016

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1Institute of Applied Physics, Semiconductor Physics,Technische Universität Dresden, 2Institut für Strukturphysik,Technische Universität Dresden

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Hieckmann, E., Nacke, M., Allardt, M., Bodrov, Y., Chekhonin, P., Skrotzki, W., Weber, J. Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope. J. Vis. Exp. (111), e53872, doi:10.3791/53872 (2016).

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