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走査型電子顕微鏡による半導体材料における拡張欠陥の総合的な特性評価
JoVE Journal
Engineering
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JoVE Journal Engineering
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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走査型電子顕微鏡による半導体材料における拡張欠陥の総合的な特性評価

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13,100 Views

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11:14 min

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May 28, 2016

DOI:

10.3791/53872-v

DOI:
10.3791/53872-v

•

11:14 min
May 28, 2016

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1Institute of Applied Physics, Semiconductor Physics,Technische Universität Dresden, 2Institut für Strukturphysik,Technische Universität Dresden

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Semiconductor MaterialsExtended DefectsScanning Electron MicroscopeCathodoluminescenceElectron Backscatter DiffractionIndium FoilSample PreparationImaging ParametersPhotomultiplier TubeCathodoluminescence Control Program

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Hieckmann, E., Nacke, M., Allardt, M., Bodrov, Y., Chekhonin, P., Skrotzki, W., Weber, J. Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope. J. Vis. Exp. (111), e53872, doi:10.3791/53872 (2016).

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