Umfassende Charakterisierung von ausgedehnten Defekten in Halbleitermaterialien durch ein Rasterelektronenmikroskop

The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.