Journal
/
Engineering
/
توصيف شامل العيوب الممتدة في المواد أشباه الموصلات من خلال مجهر المسح الإلكتروني
JoVE Journal
Engineering
This content is Free Access.
JoVE Journal Engineering
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Please note that all translations are automatically generated. Click here for the English version.

توصيف شامل العيوب الممتدة في المواد أشباه الموصلات من خلال مجهر المسح الإلكتروني

العربية

Automatically Generated

13,100 Views

•

11:14 min

•

May 28, 2016

DOI:

10.3791/53872-v

DOI:
10.3791/53872-v

•

11:14 min
May 28, 2016

•

2 Views
, , , , , ,
1Institute of Applied Physics, Semiconductor Physics,Technische Universität Dresden, 2Institut für Strukturphysik,Technische Universität Dresden

Explore More Videos

Semiconductor MaterialsExtended DefectsScanning Electron MicroscopeCathodoluminescenceElectron Backscatter DiffractionIndium FoilSample PreparationImaging ParametersPhotomultiplier TubeCathodoluminescence Control Program

Read Article

Cite this Article

Hieckmann, E., Nacke, M., Allardt, M., Bodrov, Y., Chekhonin, P., Skrotzki, W., Weber, J. Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope. J. Vis. Exp. (111), e53872, doi:10.3791/53872 (2016).

Download .ris file

Copy

Share Video

.

Copy