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Caracterização abrangente de Defeitos estendidos em Materiais Semicondutores por um Microscópio Eletrônico de Varredura
JoVE Journal
Engineering
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JoVE Journal Engineering
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Caracterização abrangente de Defeitos estendidos em Materiais Semicondutores por um Microscópio Eletrônico de Varredura

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13,236 Views

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11:14 min

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May 28, 2016

DOI:

10.3791/53872-v

DOI:
10.3791/53872-v

•

11:14 min
May 28, 2016

•

14 Views
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1Institute of Applied Physics, Semiconductor Physics,Technische Universität Dresden, 2Institut für Strukturphysik,Technische Universität Dresden

Summary

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The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.

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Cite this Article

Hieckmann, E., Nacke, M., Allardt, M., Bodrov, Y., Chekhonin, P., Skrotzki, W., Weber, J. Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope. J. Vis. Exp. (111), e53872, doi:10.3791/53872 (2016).

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