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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Journal JoVE
Ingénierie
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Journal JoVE Ingénierie
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

DOI:
10.3791/53872-v

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11:14 min

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May 28, 2016

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, , , , , ,
1Institute of Applied Physics, Semiconductor Physics,Technische Universität Dresden, 2Institut für Strukturphysik,Technische Universität Dresden

Chapitres

  • 00:05Titre
  • 01:16Sample Preparation for Cryo-cathodoluminescence Experiment
  • 02:06Cryo-cathodoluminescence Experiment
  • 06:28Performing Cross-correlation Electron Backscatter Diffraction Experiments
  • 08:50Results: Cathodoluminenscence and Strain Fields of Extended Defects in Silicon
  • 10:19Conclusion

Summary

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Traduction automatique

The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.

Tags

Keywords: Semiconductor MaterialsExtended DefectsScanning Electron MicroscopeCathodoluminescenceElectron Backscatter DiffractionIndium FoilSample PreparationImaging ParametersPhotomultiplier TubeCathodoluminescence Control Program

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