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Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography
 

Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography

Article DOI: 10.3791/54551-v • 07:51 min • February 12th, 2017
February 12th, 2017 •
1, 2
1Department of Chemistry, Portland State University, 2Logic Technology Department, Intel Corporation

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Uniformly sized nanoparticles can remove fluctuations in contact hole dimensions patterned in poly(methyl methacrylate) (PMMA) photoresist films by electron beam (E-beam) lithography. The process involves electrostatic funneling to center and deposit nanoparticles in contact holes, followed by photoresist reflow and plasma- and wet-etching steps.

Tags

Sacrificial Nanoparticles Shot-noise Contact Holes E-beam Lithography Nanopatterning Technique Resist Reflow Techniques Extreme UV Lithography Semiconductor Devices Microprocessors Memory Chips Dimensional Fluctuation Optical Shot-noise Chemical Shot-noise Bottom-up Processing Methods Top-down Processing Methods Sub-fact Self Assembly Projection Lithography SC-1 Solution SC-2 Solution RCA Cleaning Method
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