Journal
/
Engineering
/
Analyse des Interfaces de contact pour GaN appareils nanofils
JoVE Journal
Engineering
A subscription to JoVE is required to view this content.  Sign in or start your free trial.
JoVE Journal Engineering
Analysis of Contact Interfaces for Single GaN Nanowire Devices
Please note that all translations are automatically generated. Click here for the English version.

Analyse des Interfaces de contact pour GaN appareils nanofils

français

Automatically Generated

9,270 Views

•

11:13 min

•

November 15, 2013

DOI:

10.3791/50738-v

DOI:
10.3791/50738-v

•

11:13 min
November 15, 2013

•

2 Views
, ,
1Quantum Electronics and Photonics Division,National Institute of Standards and Technology

Summary

Automatically generated

Une technique a été développée qui élimine Ni / Au films métalliques de contact de leur support pour permettre l'examen et la caractérisation du contact / substrat et des interfaces de contact / NW de dispositifs simples GaN de nanofils.

Explore More Videos

GaN NanowireContact InterfaceVoid FormationContact Metal RemovalNi/Au ContactsSiO2 SubstrateContact AdhesionContact MorphologyResidual Contamination

Read Article

Cite this Article

Herrero, A. M., Blanchard, P. T., Bertness, K. A. Analysis of Contact Interfaces for Single GaN Nanowire Devices. J. Vis. Exp. (81), e50738, doi:10.3791/50738 (2013).

Download .ris file

Copy

Share Video

.

Copy