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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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November 15, 2013
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A technique was developed that removes Ni/Au contact metal films from their substrate to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN nanowire devices.
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Herrero, A. M., Blanchard, P. T., Bertness, K. A. Analysis of Contact Interfaces for Single GaN Nanowire Devices. J. Vis. Exp. (81), e50738, doi:10.3791/50738 (2013).
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