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Taşıyıcı ömür boyu ölçümlerde mikrodalga Photoconductivity çürüme yöntemi aracılığıyla yarı iletkenler
JoVE Journal
Engineering
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JoVE Journal Engineering
Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
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Taşıyıcı ömür boyu ölçümlerde mikrodalga Photoconductivity çürüme yöntemi aracılığıyla yarı iletkenler

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27,237 Views

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07:38 min

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April 18, 2019

DOI:

10.3791/59007-v

DOI:
10.3791/59007-v

•

07:38 min
April 18, 2019

•

61 Views
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1Department of Electrical & Mechanical Engineering,Nagoya Institute of Technology, 2Frontier Research Institute for Material Science,Nagoya Institute of Technology

Summary

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Yarı iletkenler önemli fiziksel parametrelerden biri, taşıyıcı ömür boyu burada mikrodalga photoconductivity çürüme yöntemi kullanan bir iletişim kuralı ölçülür.

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Cite this Article

Asada, T., Ichikawa, Y., Kato, M. Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method. J. Vis. Exp. (146), e59007, doi:10.3791/59007 (2019).

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