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Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
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JoVE Journal Engenharia
Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

DOI:
10.3791/59007-v

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07:38 min

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April 18, 2019

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, ,
1Department of Electrical & Mechanical Engineering,Nagoya Institute of Technology, 2Frontier Research Institute for Material Science,Nagoya Institute of Technology

Capítulos

  • 00:04Título
  • 00:49Preparation of the Sample and Aqueous Solutions
  • 01:44Preparation of the Measuring Equipment
  • 03:36Measurement and Data Processing
  • 05:47Results: Normalized and Calculated μ-PCD Decay Curves for the n-type 4H-SIC Sample in Air and Aqueous Solutions
  • 06:29Conclusion

Summary

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As one of the important physical parameters in semiconductors, carrier lifetime is measured herein via a protocol employing the microwave photoconductivity decay method.

Tags

Carrier LifetimeSemiconductorMicrowave Photoconductivity DecayMicro-PCD4H Silicon CarbideAqueous SolutionPulsed LaserPhotodiodeOscilloscopeMicrowave WaveguideSchottky Barrier DiodeGun Diode

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