/
/
Fabrikasjon av fleksible Image Sensor basert på Lateral NIPIN Phototransistors
A subscription to JoVE is required to view this content. Sign in or start your free trial.
Chapters
- 00:05Title
- 00:26Si Doping and Isolation
- 02:12Sacrificial Oxide Layer Deposition
- 02:59Deposition of the First Layer of Polyimide and Performing the First Metallization
- 04:43Deposition of the Second Layer of Polyimide and Performing the Second Metallization
- 05:12Encapsulating the Sample with Polyimide and Opening via Holes and Mesh Structure
- 05:56Etching the Sacrificial Layer and Transferring the Sample to a Flexible Substrate
- 07:39Results: Current-Voltage Characteristics for the Phototransistor Array in the Curved State
- 08:45Conclusion
Vi presenterer en detaljert metode å utvikle en deformerbare lateral NIPIN phototransistor matrise for buede bildesensorer. Phototransistor matrise med en åpen mesh form, som består av tynne silisium øyer og elastisk metall interconnectors, gir fleksibilitet og stretchability. Parameteren analysatoren karakteriserer elektrisk eiendom fabrikkerte phototransistor.
