We present a detailed method to fabricate a deformable lateral NIPIN phototransistor array for curved image sensors. The phototransistor array with an open mesh form, which is composed of thin silicon islands and stretchable metal interconnectors, provides flexibility and stretchability. The parameter analyzer characterizes the electrical property of the fabricated phototransistor.
Kim, H. M., Lee, G. J., Kim, M. S., Song, Y. M. Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors. J. Vis. Exp. (136), e57502, doi:10.3791/57502 (2018).