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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
 

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Article DOI: 10.3791/57502-v • 09:59 min • June 23rd, 2018
June 23rd, 2018 •
*1, *1, 1, 1
1School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology
* These authors contributed equally

Kapitel

Summary
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We present a detailed method to fabricate a deformable lateral NIPIN phototransistor array for curved image sensors. The phototransistor array with an open mesh form, which is composed of thin silicon islands and stretchable metal interconnectors, provides flexibility and stretchability. The parameter analyzer characterizes the electrical property of the fabricated phototransistor.

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Flexible Image Sensor Lateral NIPIN Phototransistors Fabrication Progress Flexor Semiconductor Device Electric Current Current Stabilate Deformation DUB Silicon On Insulator Sample Silicon Isolation Layer Structure Photoresist Layer Soft Bake Ultraviolet Photolithography Set-up Mask Developer Deionized Water Nitrogen Blow-gun Hard Bake Dry-edge Plasma-reactive Ion Etcher Buried Oxide Layer Hydrofluoric Acid Solution
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