Journal
/
공학
/
Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries
JoVE 신문
공학
JoVE 비디오를 활용하시려면 도서관을 통한 기관 구독이 필요합니다.  전체 비디오를 보시려면 로그인하거나 무료 트라이얼을 시작하세요.
JoVE 신문 공학
Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

12,573 Views

•

09:51 min

•

April 22, 2013

DOI:

10.3791/50376-v

DOI:
10.3791/50376-v

•

09:51 min
April 22, 2013

•

1 Views
, , , , ,
1Department of Microstructure Physics and Alloy Design,Max-Planck-Institut für Eisenforschung GmbH, 2Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg ( ZSW )

Summary

Automatically generated

In this work, we describe the use of the atom-probe tomography technique for studying the grain boundaries of the absorber layer in a CIGS solar cell. A novel approach to prepare the atom probe tips containing the desired grain boundary with a known structure is also presented here.

Explore More Videos

Atom Probe TomographyCu(InGa)Se2Grain BoundariesNanoscale CharacterizationSite-specific Sample PreparationFocused-ion-beamElectron Backscatter DiffractionTransmission Electron MicroscopyThin-film Solar Cells

Read Article

Cite this Article

Cojocaru-Mirédin, O., Schwarz, T., Choi, P., Herbig, M., Wuerz, R., Raabe, D. Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries. J. Vis. Exp. (74), e50376, doi:10.3791/50376 (2013).

Download .ris file

Copy

Share Video

.

Copy