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Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries
JoVE 杂志
工程学
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JoVE 杂志 工程学
Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

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09:51 min

April 22, 2013

DOI:

09:51 min
April 22, 2013

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Summary

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In this work, we describe the use of the atom-probe tomography technique for studying the grain boundaries of the absorber layer in a CIGS solar cell. A novel approach to prepare the atom probe tips containing the desired grain boundary with a known structure is also presented here.

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