Atom Probe Tomography Studies on the Cu(In,Ga)Se<sub>2</sub> Grain Boundaries

Oana Cojocaru-Mir&#233;din; Torsten Schwarz; Pyuck-Pa Choi; Michael Herbig; Roland Wuerz; Dierk Raabe

doi:10.3791/50376

Journal

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工程学

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Atom Probe Tomography Studies on the Cu(In,Ga)Se₂ Grain Boundaries

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工程学

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JoVE 杂志工程学

Atom Probe Tomography Studies on the Cu(In,Ga)Se₂ Grain Boundaries

12,573 Views

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09:51 min

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April 22, 2013

DOI:

10.3791/50376-v

DOI:

10.3791/50376-v

•

09:51 min

April 22, 2013

•

1 Views

Oana Cojocaru-Mirédin¹, Torsten Schwarz¹, Pyuck-Pa Choi¹, Michael Herbig¹, Roland Wuerz², Dierk Raabe¹

¹Department of Microstructure Physics and Alloy Design,Max-Planck-Institut für Eisenforschung GmbH, ²Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg ( ZSW )

Summary

In this work, we describe the use of the atom-probe tomography technique for studying the grain boundaries of the absorber layer in a CIGS solar cell. A novel approach to prepare the atom probe tips containing the desired grain boundary with a known structure is also presented here.

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Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

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Atom Probe Tomography Studies on the Cu(In,Ga)Se₂ Grain Boundaries