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Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries
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Ingénierie
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Journal JoVE Ingénierie
Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

DOI:
10.3791/50376-v

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09:51 min

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April 22, 2013

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, , , , ,
1Department of Microstructure Physics and Alloy Design,Max-Planck-Institut für Eisenforschung GmbH, 2Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg ( ZSW )

Chapitres

  • 00:05Titre
  • 02:29Sample Fabrication for Atom Probe Tomography Analysis
  • 05:43Atom Probe Tomography Analysis in a CAMECA LEAP 3000X HR System
  • 06:31Reconstruction of Atom Probe Tomography Data
  • 07:13Results: Elemental Maps and Concentration Depth Profiles of a Grain Boundary
  • 08:38Conclusion

Summary

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In this work, we describe the use of the atom-probe tomography technique for studying the grain boundaries of the absorber layer in a CIGS solar cell. A novel approach to prepare the atom probe tips containing the desired grain boundary with a known structure is also presented here.

Tags

Atom Probe TomographyCu(InGa)Se2Grain BoundariesNanoscale CharacterizationSite-specific Sample PreparationFocused-ion-beamElectron Backscatter DiffractionTransmission Electron MicroscopyThin-film Solar Cells

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