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Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries
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JoVE Journal Ingenieurwesen
Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

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09:51 min

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April 22, 2013

DOI:

10.3791/50376-v

DOI:
10.3791/50376-v

•

09:51 min
April 22, 2013

•

1 Views
, , , , ,
1Department of Microstructure Physics and Alloy Design,Max-Planck-Institut für Eisenforschung GmbH, 2Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg ( ZSW )

Summary

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In this work, we describe the use of the atom-probe tomography technique for studying the grain boundaries of the absorber layer in a CIGS solar cell. A novel approach to prepare the atom probe tips containing the desired grain boundary with a known structure is also presented here.

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Cojocaru-Mirédin, O., Schwarz, T., Choi, P., Herbig, M., Wuerz, R., Raabe, D. Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries. J. Vis. Exp. (74), e50376, doi:10.3791/50376 (2013).

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