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Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects
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Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

DOI:
10.3791/53614-v

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09:15 min

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January 04, 2016

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1Research School of Engineering,Australian National University

'Bölümler'

  • 00:05'Başlık'
  • 01:02Cleaning and Etching the Silicon Wafers
  • 04:08Silicon Wafer Passivation and Photoconductive (PC) Measurement
  • 07:08Results: Silicon Wafer Photoconductive Measurement after Surface Passivation
  • 08:10Conclusion

Özet

'Otomatik Çeviri'

'Otomatik Çeviri'

A RT liquid surface passivation technique to investigate the recombination activity of bulk silicon defects is described. For the technique to be successful, three critical steps are required: (i) chemical cleaning and etching of silicon, (ii) immersion of silicon in 15% hydrofluoric acid and (iii) illumination for 1 min.

'Etiketler'

Silicon WafersBulk DefectsSurface PassivationHydrofluoric AcidChemical CleaningSC1SC2Recombination ActivityHigh-purity SiliconSolar CellsLifetimeDI WaterQuartz CradleFume HoodTemperature Control

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