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Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects
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Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects
Capitoli
- 00:05Titolo
- 01:02Cleaning and Etching the Silicon Wafers
- 04:08Silicon Wafer Passivation and Photoconductive (PC) Measurement
- 07:08Results: Silicon Wafer Photoconductive Measurement after Surface Passivation
- 08:10Conclusion
A RT liquid surface passivation technique to investigate the recombination activity of bulk silicon defects is described. For the technique to be successful, three critical steps are required: (i) chemical cleaning and etching of silicon, (ii) immersion of silicon in 15% hydrofluoric acid and (iii) illumination for 1 min.
