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Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects
JoVE 杂志
工程学
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JoVE 杂志 工程学
Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects
DOI:

09:15 min

January 04, 2016

Chapters

  • 00:05Title
  • 01:02Cleaning and Etching the Silicon Wafers
  • 04:08Silicon Wafer Passivation and Photoconductive (PC) Measurement
  • 07:08Results: Silicon Wafer Photoconductive Measurement after Surface Passivation
  • 08:10Conclusion

Summary

自动翻译

A RT liquid surface passivation technique to investigate the recombination activity of bulk silicon defects is described. For the technique to be successful, three critical steps are required: (i) chemical cleaning and etching of silicon, (ii) immersion of silicon in 15% hydrofluoric acid and (iii) illumination for 1 min.

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