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Plasma-geassisteerde moleculaire straal epitaxy groei van mg3n2 en Zn3n2 dunne films
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JoVE 신문 공학
Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films
DOI:

13:05 min

May 11, 2019

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Chapters

  • 00:00Title
  • 00:57MgO Substrate Preparation
  • 01:50Operation of VG V80 MBE
  • 02:13Substrate Loading
  • 04:04Metal Flux Measurements
  • 05:59Nitrogen Plasma
  • 06:51In-situ Laser Light Scattering
  • 08:35Growth Rate Determination
  • 09:13Results
  • 10:46Conclusion

Summary

자동 번역

Dit artikel beschrijft de groei van epitaxiale films van mg3n2 en Zn3n2 op MgO substraten door plasma-geassisteerde moleculaire straal epitaxy met N2 gas als de stikstofbron en optische groei monitoring.

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