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Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films
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Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films

7,399 Views

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13:05 min

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May 11, 2019

DOI:

10.3791/59415-v

DOI:
10.3791/59415-v

•

13:05 min
May 11, 2019

•

4 Views
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1Department of Electrical and Computer Engineering,University of Victoria

Summary

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This article describes the growth of epitaxial films of Mg3N2 and Zn3N2 on MgO substrates by plasma-assisted molecular beam epitaxy with N2 gas as the nitrogen source and optical growth monitoring.

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Plasma-assisted Molecular Beam EpitaxyMg3N2Zn3N2II-V Compound SemiconductorsAnti-bixbyite Crystal StructureMBE GrowthMgO SubstrateHigh-temperature AnnealingRHEEDQuartz Crystal MicrobalanceSample DegassingSample Transfer

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Cite this Article

Wu, P., Tiedje, T. Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films. J. Vis. Exp. (147), e59415, doi:10.3791/59415 (2019).

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