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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Analysis of Contact Interfaces for Single GaN Nanowire Devices

Analysis of Contact Interfaces for Single GaN Nanowire Devices

DOI:
10.3791/50738-v

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11:13 min

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November 15, 2013

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, ,
1Quantum Electronics and Photonics Division,National Institute of Standards and Technology

Capitoli

  • 00:05Titolo
  • 01:32Wafer Preparation
  • 03:14Photolithography of Contact Pattern
  • 04:55Electron-beam Evaporation of Contact Metals
  • 06:29Contact Metal Lift-off and Annealing
  • 07:38Ni/Au Film Removal
  • 09:04Results: Annealed Ni/Au Films Removed with Carbon Tape
  • 10:45Conclusion

Summary

Traduzione automatica

Traduzione automatica

A technique was developed that removes Ni/Au contact metal films from their substrate to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN nanowire devices.

Tags

GaN NanowireContact InterfaceVoid FormationContact Metal RemovalNi/Au ContactsSiO2 SubstrateContact AdhesionContact MorphologyResidual Contamination

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