Rivista
/
Ingegneria
/
Analyse van Contact Interfaces for Single GaN Nanodraad Devices
JoVE Journal
Ingegneria
È necessario avere un abbonamento a JoVE per visualizzare questo.  Accedi o inizia la tua prova gratuita.
JoVE Journal Ingegneria
Analysis of Contact Interfaces for Single GaN Nanowire Devices
Please note that all translations are automatically generated. Click here for the English version.

Analyse van Contact Interfaces for Single GaN Nanodraad Devices

9,266 Views

•

11:13 min

•

November 15, 2013

DOI:

10.3791/50738-v

DOI:
10.3791/50738-v

•

11:13 min
November 15, 2013

•

2 Views
, ,
1Quantum Electronics and Photonics Division,National Institute of Standards and Technology

Summary

Automatically generated

Een techniek ontwikkeld die Ni / Au contact metaal films verwijdert uit hun substraat te laten voor het onderzoek en karakterisering van het contact / substraat en contact / NW interfaces van enkele GaN nanodraad apparaten.

Explore More Videos

GaN NanowireContact InterfaceVoid FormationContact Metal RemovalNi/Au ContactsSiO2 SubstrateContact AdhesionContact MorphologyResidual Contamination

Read Article

Cite this Article

Herrero, A. M., Blanchard, P. T., Bertness, K. A. Analysis of Contact Interfaces for Single GaN Nanowire Devices. J. Vis. Exp. (81), e50738, doi:10.3791/50738 (2013).

Download .ris file

Copy

Share Video

.

Copy