Analysis of Contact Interfaces for Single GaN Nanowire Devices

Andrew M. Herrero; Paul T. Blanchard; Kris A. Bertness

doi:10.3791/50738

ジャーナル

/

工学

/

Analysis of Contact Interfaces for Single GaN Nanowire Devices

JoVE Journal
工学

このコンテンツを視聴するには、JoVE 購読が必要です。 サインイン又は無料トライアルを申し込む。

JoVE Journal 工学

Analysis of Contact Interfaces for Single GaN Nanowire Devices

9,270 Views

•

11:13 min

•

November 15, 2013

DOI:

10.3791/50738-v

DOI:

10.3791/50738-v

•

11:13 min

November 15, 2013

•

2 Views

Andrew M. Herrero¹, Paul T. Blanchard¹, Kris A. Bertness¹

¹Quantum Electronics and Photonics Division,National Institute of Standards and Technology

概要

A technique was developed that removes Ni/Au contact metal films from their substrate to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN nanowire devices.

Explore More Videos

GaN Nanowire Contact Interface Void Formation Contact Metal Removal Ni/Au Contacts SiO2 Substrate Contact Adhesion Contact Morphology Residual Contamination

Read Article

Analysis of Contact Interfaces for Single GaN Nanowire Devices

概要

Automatically generated

Explore More Videos