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单氮化镓纳米线设备分析接触界面
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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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单氮化镓纳米线设备分析接触界面

9,266 Views

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11:13 min

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November 15, 2013

DOI:

10.3791/50738-v

DOI:
10.3791/50738-v

•

11:13 min
November 15, 2013

•

2 Views
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1Quantum Electronics and Photonics Division,National Institute of Standards and Technology

Summary

Automatically generated

一种技术的开发，可以消除镍/金金属接触片从基底，以允许接触/基板和氮化镓单纳米线器件的接触/净重接口的检验和鉴定。

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Cite this Article

Herrero, A. M., Blanchard, P. T., Bertness, K. A. Analysis of Contact Interfaces for Single GaN Nanowire Devices. J. Vis. Exp. (81), e50738, doi:10.3791/50738 (2013).

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