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Proceso de solución asistida por Vapor de baja presión para banda sintonizables hueco agujero de alfiler-libre Methylammonium plomo haluro perovskita películas
1Joint Center for Artificial Photosynthesis, Chemical Sciences Division,Lawrence Berkeley National Laboratory, 2Electrical Engineering and Computer Sciences,University of California, Berkeley, 3Materials Science Division,Lawrence Berkeley National Laboratory, 4Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China, 5Department of Physics, Graduate School of Nanotechnology,University of Trieste, 6TASC Laboratory,IOM-CNR – Istituto Officina dei Materiali, 7Department of Chemistry,University of California, Berkeley, 8Materials Science and Engineering,University of California, Berkeley, 9Joint Center for Artificial Photosynthesis,Lawrence Berkeley National Laboratory
Chapters
- 00:05Title
- 00:52Preparation of Methylammonium Halide
- 02:50Preparation of Methylammonium Lead Halide Thin Films
- 05:30Results: Formation of Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
- 07:12Conclusion
Aquí, presentamos un protocolo para la síntesis de CH3NH3I y precursores de Br CH3NH3y la posterior formación de agujero de alfiler-libre, continuadas CH3NH3PbIx 3Brx películas delgadas para el aplicación en células solares de alta eficiencia y otros dispositivos optoelectrónicos.
