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Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
JoVE Journal
Chemie
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JoVE Journal Chemie
Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

DOI:

08:12 min

September 08, 2017

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Kapitel

  • 00:05Titel
  • 00:52Preparation of Methylammonium Halide
  • 02:50Preparation of Methylammonium Lead Halide Thin Films
  • 05:30Results: Formation of Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
  • 07:12Conclusion

Summary

Automatische Übersetzung

Here, we present a protocol for the synthesis of CH3NH3I and CH3NH3Br precursors and the subsequent formation of pinhole-free, continuous CH3NH3PbI3-xBrx thin films for the application in high efficiency solar cells and other optoelectronic devices.

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