このコンテンツを視聴するには、JoVE 購読が必要です。 サインイン又は無料トライアルを申し込む。
Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
9,392 Views
•
08:12 min
•
September 08, 2017
DOI:
1Joint Center for Artificial Photosynthesis, Chemical Sciences Division,Lawrence Berkeley National Laboratory, 2Electrical Engineering and Computer Sciences,University of California, Berkeley, 3Materials Science Division,Lawrence Berkeley National Laboratory, 4Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China, 5Department of Physics, Graduate School of Nanotechnology,University of Trieste, 6TASC Laboratory,IOM-CNR – Istituto Officina dei Materiali, 7化学科,University of California, Berkeley, 8Materials Science and Engineering,University of California, Berkeley, 9Joint Center for Artificial Photosynthesis,Lawrence Berkeley National Laboratory
概要
Automatically generated
Here, we present a protocol for the synthesis of CH3NH3I and CH3NH3Br precursors and the subsequent formation of pinhole-free, continuous CH3NH3PbI3-xBrx thin films for the application in high efficiency solar cells and other optoelectronic devices.
Read Article
Cite this Article
Sutter-Fella, C. M., Li, Y., Cefarin, N., Buckley, A., Ngo, Q. P., Javey, A., Sharp, I. D., Toma, F. M. Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films. J. Vis. Exp. (127), e55404, doi:10.3791/55404 (2017).
Copy