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Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
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September 08, 2017
DOI:
1Joint Center for Artificial Photosynthesis, Chemical Sciences Division,Lawrence Berkeley National Laboratory, 2Electrical Engineering and Computer Sciences,University of California, Berkeley, 3Materials Science Division,Lawrence Berkeley National Laboratory, 4Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China, 5Department of Physics, Graduate School of Nanotechnology,University of Trieste, 6TASC Laboratory,IOM-CNR – Istituto Officina dei Materiali, 7Kimya Bölümü,University of California, Berkeley, 8Materials Science and Engineering,University of California, Berkeley, 9Joint Center for Artificial Photosynthesis,Lawrence Berkeley National Laboratory
Özet
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Here, we present a protocol for the synthesis of CH3NH3I and CH3NH3Br precursors and the subsequent formation of pinhole-free, continuous CH3NH3PbI3-xBrx thin films for the application in high efficiency solar cells and other optoelectronic devices.
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Sutter-Fella, C. M., Li, Y., Cefarin, N., Buckley, A., Ngo, Q. P., Javey, A., Sharp, I. D., Toma, F. M. Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films. J. Vis. Exp. (127), e55404, doi:10.3791/55404 (2017).
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