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Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
 

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

Article DOI: 10.3791/54268-v • 09:45 min • July 26th, 2016
July 26th, 2016 •
1, 1, 1, 1
1McKetta Department of Chemical Engineering, The University of Texas at Austin

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This work details the procedures for the growth and characterization of crystalline SrTiO3 directly on germanium substrates by atomic layer deposition. The procedure illustrates the ability of an all-chemical growth method to integrate oxides monolithically onto semiconductors for metal-oxide semiconductor devices.

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Epitaxial Growth Perovskite Strontium Titanate Germanium Atomic Layer Deposition High Dielectric Constant Gadoxides Microelectronics Platform Trap Densities Interface States Manufacturing Setting Three-dimensional Device Architectures Precursors Handling Reactor Timing Molecular Beam Epitaxy Atomic Layer Deposition Adaptation Sample Cleaning Growth Surface Reconstruction Heavily Doped Germanium Substrate
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