This content is Free Access.
Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
9,780 Views
•
10:25 min
•
September 14, 2018
DOI:
Summary
Automatically generated
We use an aberration-corrected scanning transmission electron microscope to define single-digit nanometer patterns in two widely-used electron-beam resists: poly (methyl methacrylate) and hydrogen silsesquioxane. Resist patterns can be replicated in target materials of choice with single-digit nanometer fidelity using liftoff, plasma etching, and resist infiltration by organometallics.
Read Article
Cite this Article
Camino, F. E., Manfrinato, V. R., Stein, A., Zhang, L., Lu, M., Stach, E. A., Black, C. T. Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope. J. Vis. Exp. (139), e58272, doi:10.3791/58272 (2018).
Copy