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Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
 

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope

Article DOI: 10.3791/58272-v • 10:25 min • September 14th, 2018
September 14th, 2018 •
1, 1, 1, 1, 1, 1, 1
1Center for Functional Nanomaterials, Brookhaven National Laboratory

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We use an aberration-corrected scanning transmission electron microscope to define single-digit nanometer patterns in two widely-used electron-beam resists: poly (methyl methacrylate) and hydrogen silsesquioxane. Resist patterns can be replicated in target materials of choice with single-digit nanometer fidelity using liftoff, plasma etching, and resist infiltration by organometallics.

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Keywords: Electron-beam Lithography Scanning Transmission Electron Microscope STEM Aberration-correction Nanometer Resolution Electron Beam Resist Pattern Transfer Nanoscale Fabrication HSQ Resist Spin Coating TEM Chip Sample Preparation
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