This content is Free Access.
走査型電子顕微鏡による半導体材料における拡張欠陥の総合的な特性評価
13,157 Views
•
11:14 min
•
May 28, 2016
DOI:
Summary
Automatically generated
The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.
Read Article
Cite this Article
Hieckmann, E., Nacke, M., Allardt, M., Bodrov, Y., Chekhonin, P., Skrotzki, W., Weber, J. Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope. J. Vis. Exp. (111), e53872, doi:10.3791/53872 (2016).
Copy