Journal
/
공학
/
Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
JoVE 신문
공학
JoVE 비디오를 활용하시려면 도서관을 통한 기관 구독이 필요합니다.  전체 비디오를 보시려면 로그인하거나 무료 트라이얼을 시작하세요.
JoVE 신문 공학
Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

7,155 Views

•

09:45 min

•

December 02, 2013

DOI:

10.3791/50770-v

DOI:
10.3791/50770-v

•

09:45 min
December 02, 2013

•

2 Views
, , , ,
1Institute of Chemistry,The Hebrew University of Jerusalem, 2Center for Nanoscience and Nanotechnology,The Hebrew University of Jerusalem

Summary

Automatically generated

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

Explore More Videos

Monolayer Contact DopingSilicon SurfacesSilicon NanowiresOrganophosphorus CompoundsUltra-shallow Doping ProfilesTetraethyl MethylenediphosphonateVapor-liquid-solid (VLS) MechanismNanowire Field-effect Transistor (NW-FET)

Read Article

Cite this Article

Hazut, O., Agarwala, A., Subramani, T., Waichman, S., Yerushalmi, R. Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds. J. Vis. Exp. (82), e50770, doi:10.3791/50770 (2013).

Download .ris file

Copy

Share Video

.

Copy