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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
JoVE 杂志
工程学
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JoVE 杂志 工程学
Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
DOI:

09:45 min

December 02, 2013

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Chapters

  • 00:05Title
  • 01:32Surface Cleaning
  • 02:50Monolayer Formation
  • 03:43Nanowire Synthesis
  • 05:02Nanowire Drop-casting onto Substrate and Rapid Thermal Anneal
  • 06:24Sheet Resistance Measurements, Nanowire Device Fabrication and Characterization
  • 08:03Results: Sheet Resistance Measurements and Nanowire FET I-V Curves Using Monolayer Contact Doped Materials
  • 09:08Conclusion

Summary

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A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

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