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纳米加工门定义的GaAs / AlGaAs多量子点横向
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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纳米加工门定义的GaAs / AlGaAs多量子点横向

15,903 Views

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15:47 min

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November 01, 2013

DOI:

10.3791/50581-v

DOI:
10.3791/50581-v

•

15:47 min
November 01, 2013

•

5 Views
, ,
1Département de Physique, Faculté des Sciences,Université de Sherbrooke

Summary

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本文提出了一个详细的制作门定义的半导体横向量子点砷化镓异质协议。这些纳米器件被用来捕获一些电子作为量子比特的量子信息处理或其他细观实验，如相干电导测量使用。

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Cite this Article

Bureau-Oxton, C., Camirand Lemyre, J., Pioro-Ladrière, M. Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots. J. Vis. Exp. (81), e50581, doi:10.3791/50581 (2013).

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