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多孔硅薄膜作为神经生长因子载体的设计
JoVE Journal
Biyomühendislik
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JoVE Journal Biyomühendislik
Designing Porous Silicon Films as Carriers of Nerve Growth Factor
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多孔硅薄膜作为神经生长因子载体的设计

DOI:
10.3791/58982-v

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10:12 min

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January 25, 2019

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, , ,
1Department of Biotechnology and Food Engineering,Technion – Israel Institute of Technology, 2Faculty of Engineering,Bar-Ilan University, 3Bar-Ilan Institute of Nanotechnologies and Advanced Materials, 4Russell Berrie Nanotechnology Institute,Technion – Israel Institute of Technology

Bölümler

  • 00:04Başlık
  • 00:57Oxidized Porous Silicon (PSiO2) Carrier Fabrication
  • 02:10Nerve Growth Factor (NGF) Loading and Quantification and In Vitro NGF Release from PSiO2 Carriers
  • 04:42Cell Viability and Growth in the Presence of NGF-Loaded PSiO2 Carriers
  • 06:00Cell Differentiation Analysis
  • 07:27Results: Representative Effects of NGF-Loaded PSiO2 Carriers on Neuronal Growth and Development
  • 08:58Conclusion

Özet

Otomatik Çeviri

Otomatik Çeviri

在这里, 我们提出了一个方案, 设计和制造纳米结构多孔硅 (psi) 薄膜作为可降解载体的神经生长因子 (ngf)。pc12 细胞和小鼠背根神经节 (drg) 神经元的神经分化和生长特征是在与 ngf 负载 psi 载体治疗时的特征。

Etiketler

Porous SiliconNerve Growth FactorNGFCarrierBioactive ProteinReservoir ImplantFabrication ProcessElectrochemical EtchingThermal OxidationLoading SolutionELISA

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