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Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
JoVE Journal
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JoVE Journal Mühendislik
Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

DOI:
10.3791/54235-v

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13:58 min

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September 28, 2016

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, , , ,
1Department of Physics and Institute of Nanoscience,National Chung Hsing University, 2Metallurgy Section, Materials & Electro-Optics Research Division,National Chung-Shan Institute of Science and Technology, 3National Center for High-Performance Computing

'Bölümler'

  • 00:05'Başlık'
  • 01:21Fabrication of Hexagonal-closed-packaged (HCP) Overlayer of C84 in Si Substrate
  • 02:57Measurements of Electronic Properties of C84-embedded Si Substrate
  • 05:07Measurements of Surface Magnetism
  • 06:17Measurements of Nanomechanical Properties by AFM
  • 06:49Measurement of Nanomechanical Properties by Molecular Dynamics Simulation
  • 11:05Results: Characterization of C84-embedded Silicon Substrate by Nanomeasurements and Molecular Dynamic Simulation
  • 12:46Conclusion

Özet

'Otomatik Çeviri'

'Otomatik Çeviri'

This paper reports the nanomaterial fabrication of a fullerene Si substrate inspected and verified by nanomeasurements and molecular dynamic simulation.

'Etiketler'

C84-embedded Si SubstrateScanning Probe MicroscopyMolecular DynamicsNanomaterialsNanostructuresSilicon (111) SubstrateC84 DepositionFullereneUHV-STMHeterojunctionElectronic PropertiesOptoelectronic PropertiesMechanical PropertiesMagnetic PropertiesField Emission Properties

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