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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
 

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Article DOI: 10.3791/58897-v • 06:57 min • July 17th, 2020
July 17th, 2020 •
1, 2, 1, 1,3
1Department of Materials Engineering, The University of Tokyo, 2Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 3Department of Materials Science and Engineering, Massachusetts Institute of Technology

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Theoretical calculation and experimental verification are proposed for a reduction of threading dislocation (TD) density in germanium epitaxial layers with semicylindrical voids on silicon. Calculations based on the interaction of TDs and surface via image force, TD measurements, and transmission electron microscope observations of TDs are presented.

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Keywords: Dislocation Reduction Germanium Epitaxial Layers Semicylindrical Voids Silicon Threading Dislocation Density Selective Epitaxial Growth Boron-doped P-silicon Silicon Dioxide Photoresist Buffered Hydrofluoric Acid Germanium Growth
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