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シリコン上に半円筒空隙を有するゲルマニウムエピタキシャル層の転位低減に関する理論計算と実験的検証

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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シリコン上に半円筒空隙を有するゲルマニウムエピタキシャル層の転位低減に関する理論計算と実験的検証

1,980 Views

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06:57 min

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July 17, 2020

DOI:

10.3791/58897-v

DOI:

10.3791/58897-v

•

06:57 min

July 17, 2020

•

1 Views

Motoki Yako, Yasuhiko Ishikawa, Eiji Abe, Kazumi Wada³

¹Department of Materials Engineering,The University of Tokyo, ²Department of Electrical and Electronic Information Engineering,Toyohashi University of Technology, ³Department of Materials Science and Engineering,Massachusetts Institute of Technology

Tags

Dislocation Reduction Germanium Epitaxial Layers Semicylindrical Voids Silicon Threading Dislocation Density Selective Epitaxial Growth Boron-doped P-silicon Silicon Dioxide Photoresist Buffered Hydrofluoric Acid Germanium Growth

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