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Teoretisk beregning og eksperimentell verifikasjon for dislokasjonsreduksjon i germanium epitaksiale lag med semisylindriske hulrom på silisium
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Teoretisk beregning og eksperimentell verifikasjon for dislokasjonsreduksjon i germanium epitaksiale lag med semisylindriske hulrom på silisium

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06:57 min

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July 17, 2020

DOI:

10.3791/58897-v

DOI:
10.3791/58897-v

•

06:57 min
July 17, 2020

•

1 Views
, , ,
1Department of Materials Engineering,The University of Tokyo, 2Department of Electrical and Electronic Information Engineering,Toyohashi University of Technology, 3Department of Materials Science and Engineering,Massachusetts Institute of Technology

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Dislocation ReductionGermanium Epitaxial LayersSemicylindrical VoidsSiliconThreading Dislocation DensitySelective Epitaxial GrowthBoron-doped P-siliconSilicon DioxidePhotoresistBuffered Hydrofluoric AcidGermanium Growth

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Yako, M., Ishikawa, Y., Abe, E., Wada, K. Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon. J. Vis. Exp. (161), e58897, doi:10.3791/58897 (2020).

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