Journal
/
Engenharia
/
חישוב תיאורטי ואימות ניסיוני להפחתת נקעים בשכבות גרמניום אפיטקסיאליות עם חללים סמי-גליליים על סיליקון
JoVE Journal
Engenharia
É necessária uma assinatura da JoVE para visualizar este conteúdo.  Faça login ou comece sua avaliação gratuita.
JoVE Journal Engenharia
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Please note that all translations are automatically generated. Click here for the English version.

חישוב תיאורטי ואימות ניסיוני להפחתת נקעים בשכבות גרמניום אפיטקסיאליות עם חללים סמי-גליליים על סיליקון

1,980 Views

•

06:57 min

•

July 17, 2020

DOI:

10.3791/58897-v

DOI:
10.3791/58897-v

•

06:57 min
July 17, 2020

•

1 Views
, , ,
1Department of Materials Engineering,The University of Tokyo, 2Department of Electrical and Electronic Information Engineering,Toyohashi University of Technology, 3Department of Materials Science and Engineering,Massachusetts Institute of Technology

Tags

Dislocation ReductionGermanium Epitaxial LayersSemicylindrical VoidsSiliconThreading Dislocation DensitySelective Epitaxial GrowthBoron-doped P-siliconSilicon DioxidePhotoresistBuffered Hydrofluoric AcidGermanium Growth

Read Article

Cite this Article

Yako, M., Ishikawa, Y., Abe, E., Wada, K. Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon. J. Vis. Exp. (161), e58897, doi:10.3791/58897 (2020).

Download .ris file

Copy

Share Video

.

Copy