Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Mon-Shu Ho; Chih-Pong Huang; Jyun-Hwei Tsai; Che-Fu Chou; Wen-Jay Lee

doi:10.3791/54235

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Engenharia

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C 프로빙 (84)은 스캐닝 프로브 현미경 및 분자 역학을 사용하여 실리콘 기판을 - 임베디드

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Probing C₈₄-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

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C 프로빙 (84)은 스캐닝 프로브 현미경 및 분자 역학을 사용하여 실리콘 기판을 - 임베디드

11,559 Views

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13:58 min

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September 28, 2016

DOI:

10.3791/54235-v

DOI:

10.3791/54235-v

•

13:58 min

September 28, 2016

•

12 Views

Mon-Shu Ho¹, Chih-Pong Huang², Jyun-Hwei Tsai³, Che-Fu Chou¹, Wen-Jay Lee³

¹Department of Physics and Institute of Nanoscience,National Chung Hsing University, ²Metallurgy Section, Materials & Electro-Optics Research Division,National Chung-Shan Institute of Science and Technology, ³National Center for High-Performance Computing

Summary

This paper reports the nanomaterial fabrication of a fullerene Si substrate inspected and verified by nanomeasurements and molecular dynamic simulation.

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C84-embedded Si Substrate Scanning Probe Microscopy Molecular Dynamics Nanomaterials Nanostructures Silicon (111) Substrate C84 Deposition Fullerene UHV-STM Heterojunction Electronic Properties Optoelectronic Properties Mechanical Properties Magnetic Properties Field Emission Properties

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C 프로빙<sub> (84)</sub>은 스캐닝 프로브 현미경 및 분자 역학을 사용하여 실리콘 기판을 - 임베디드

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