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Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
 

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Article DOI: 10.3791/62015-v • 07:24 min • May 10th, 2021
May 10th, 2021 •
1, 1
1Electron Nanoscopy Division, Advanced Measurement Technology Center, Institute of Materials & Systems for Sustainability, Nagoya University

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요약
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We provide a general outline of quantitative microanalysis methods for estimating the site occupancies of impurities and their chemical states by taking advantage of electron-channeling phenomena under incident electron beam-rocking conditions, which reliably extract information from minority species, light elements, oxygen vacancies, and other point/line/planar defects.

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Quantitative Atomic-Site Analysis Functional Dopants Point Defects Crystalline Materials Electron-Channeling-Enhanced Microanalysis Elemental Analysis Chemical Analysis Impurities Dopants Energy-dispersive X-ray Spectroscopy Electron Energy-loss Spectroscopy Low Cost Quantitative Reliability Analytical Techniques Thin Film Sample Transmission Electron Microscopy Double-tilting Sample Holder Scanning Mode Energy-dispersive X-ray Detector Beam Alignment Procedure STEM Mode Optical Axis Alignment
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