Journal
/
공학
/
Fabricage van Gate-afstembare Grafeen Inrichtingen voor Scanning Tunneling Microscopy Studies met Coulomb Verontreinigingen
JoVE 신문
공학
JoVE 비디오를 활용하시려면 도서관을 통한 기관 구독이 필요합니다.  전체 비디오를 보시려면 로그인하거나 무료 트라이얼을 시작하세요.
JoVE 신문 공학
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Please note that all translations are automatically generated. Click here for the English version.

Fabricage van Gate-afstembare Grafeen Inrichtingen voor Scanning Tunneling Microscopy Studies met Coulomb Verontreinigingen

15,173 Views

•

11:42 min

•

July 24, 2015

DOI:

10.3791/52711-v

DOI:
10.3791/52711-v

•

11:42 min
July 24, 2015

•

5 Views
, , , , , , , , , , , , , , ,
1Department of Physics,University of California at Berkeley, 2Department of Chemistry,University of California at Berkeley, 3Department of Chemical and Biomolecular Engineering,University of California at Berkeley, 4National Institute for Materials Science (Japan), 5Materials Sciences Division,Lawrence Berkeley National Laboratory, 6Kavli Energy NanoSciences Institute,University of California at Berkeley and Lawrence Berkeley National Laboratory

Summary

Automatically generated

This paper details the fabrication process of a gate-tunable graphene device, decorated with Coulomb impurities for scanning tunneling microscopy studies. Mapping the spatially dependent electronic structure of graphene in the presence of charged impurities unveils the unique behavior of its relativistic charge carriers in response to a local Coulomb potential.

Explore More Videos

GrapheneScanning Tunneling MicroscopyScanning Tunneling SpectroscopyCoulomb ImpuritiesGate-tunableElectronic PropertiesCharge CarriersHybrid DeviceFabrication

Read Article

Cite this Article

Jung, H. S., Tsai, H., Wong, D., Germany, C., Kahn, S., Kim, Y., Aikawa, A. S., Desai, D. K., Rodgers, G. F., Bradley, A. J., Velasco Jr., J., Watanabe, K., Taniguchi, T., Wang, F., Zettl, A., Crommie, M. F. Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities. J. Vis. Exp. (101), e52711, doi:10.3791/52711 (2015).

Download .ris file

Copy

Share Video

.

Copy