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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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11:42 min

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July 24, 2015

DOI:

10.3791/52711-v

DOI:
10.3791/52711-v

•

11:42 min
July 24, 2015

•

5 Views
, , , , , , , , , , , , , , ,
1物理学科,University of California at Berkeley, 2化学科,University of California at Berkeley, 3Department of Chemical and Biomolecular Engineering,University of California at Berkeley, 4National Institute for Materials Science (Japan), 5Materials Sciences Division,Lawrence Berkeley National Laboratory, 6Kavli Energy NanoSciences Institute,University of California at Berkeley and Lawrence Berkeley National Laboratory

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This paper details the fabrication process of a gate-tunable graphene device, decorated with Coulomb impurities for scanning tunneling microscopy studies. Mapping the spatially dependent electronic structure of graphene in the presence of charged impurities unveils the unique behavior of its relativistic charge carriers in response to a local Coulomb potential.

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GrapheneScanning Tunneling MicroscopyScanning Tunneling SpectroscopyCoulomb ImpuritiesGate-tunableElectronic PropertiesCharge CarriersHybrid DeviceFabrication

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Jung, H. S., Tsai, H., Wong, D., Germany, C., Kahn, S., Kim, Y., Aikawa, A. S., Desai, D. K., Rodgers, G. F., Bradley, A. J., Velasco Jr., J., Watanabe, K., Taniguchi, T., Wang, F., Zettl, A., Crommie, M. F. Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities. J. Vis. Exp. (101), e52711, doi:10.3791/52711 (2015).

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