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Chapter 10

半導体の基礎

Chapter 10

Basics of Semiconductors

The Fermi-Dirac function, represented by a sigmoid curve, indicates the probability of an energy state being occupied by an electron at a given …
The vacuum level represents the energy threshold for an electron to escape a material's surface. It typically lies above a semiconductor's …
Solids are composed of atoms with distinct electronic configurations and energy levels. When two identical isolated atoms are brought close together, …
Materials are broadly categorized into three types as metals, insulators, and semiconductors. Metals have no energy band gap due to the overlap of the …
A pure silicon wafer used in integrated circuits is an intrinsic semiconductor that lacks impurities and exhibits low electrical conductivity. At zero …
Carrier generation refers to the creation of electron-hole pairs. Band-to-band generation occurs in direct band gap semiconductors via thermal excitation …
Carrier transport in semiconductors generates current, through drift and diffusion mechanisms. Drift current arises when an external electric field causes …
Solar streetlights function independently without the requirement of an external power supply, as they contain p-n junctions within their solar cells. A …
The p-n junction within an LED requires external biasing to produce light. Forward biasing involves applying a voltage across the p-n junction with the …
Contact between a Metal and a semiconductor forms a junction with either Schottky or Ohmic behavior. If the metal's work function exceeds that of the …
Biasing metal and n-type semiconductor junctions involves applying a voltage to metal while grounding the semiconductor. The resulting current is positive …
As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated, by …
Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other applications …
This work presents a protocol employing the microwave photoconductivity decay (μ-PCD) for measurement of the carrier lifetime in semiconductor …